Guohua Ding, President of suzhou convert semiconductor co., LTD. : improved device structure and process research of silicon carbide MOSFET RONSP

      Silicon carbide (SiC) and gallium nitride (GaN), as the typical representatives of the third generation of semiconductor materials, also represent the development direction of power electronic devices, and have great development potential in the new generation of high-efficiency, small-size power conversion and management systems, new energy vehicles, industrial motors and other fields.

      From November 25 to 27, the 16th China international semiconductor lighting forum (SSLCHINA 2019) and the 2019 international third generation semiconductor forum (IFWS 2019) were held in shenzhen convention and exhibition center. As an important branch of technology, BBS "power electronic devices and packaging technology Ⅰ" BBS held successfully on Monday morning. Meeting by the national semiconductor lighting project research and development and industry alliance, the third generation of semiconductor industry technology innovation strategic alliance, the third generation of semiconductor research institute in shenzhen and Beijing McCann bridge co., LTD. Jointly undertake new materials productivity promotion center, the longhua district of shenzhen bureau of science and technology innovation, strong German ace co., LTD., national grid, global energy Internet research institute co., LTD., China electronics technology group institute, and the 13 secco technology co., LTD, suzhou convert co-host support semiconductor co., LTD. The meeting was co-chaired by the chapter chairman, shengguan, distinguished professor of zhejiang university and dean of the school of electrical engineering, and liu Yang, professor of sun yat-sen university.

      At the meeting, Mr.  Guohua Ding, President of suzhou convert semiconductor co., LTD., was invited to present the theme report on device structure and process improvement of silicon carbide MOSFET RONSP. Guohua Ding, President of suzhou convert semiconductor co., LTD., graduated from xi 'an jiaotong university with a bachelor's degree in semiconductor physics and devices in 1986, and from southeast university with a master's degree in semiconductor physics and devices in 1991. From July 1986 to December 1997, he worked in China hua jing electronics group co., LTD., serving successively as product process engineer, product design engineer and technical deputy director of the branch factory. In May 2003, he founded wuxi si power microelectronics co., LTD., and successively served as vice chairman, general manager and chairman of the board of directors of the company. Was awarded outstanding general manager by wuxi government. In 2015, he joined suzhou kai wit semiconductor co., LTD., and served as the President of the company. The company is committed to the development and sales of power semiconductor devices and power integration chips. The company successfully launched the mass production grade 1200V SiC MOSFET in 2018, and the company was awarded the title of "small giant enterprise of science and technology" in jiangsu province in 2018.

       Guohua Ding President, said the silicon carbide MOSFET due to difficulties of manufacture process and material limit, cannot like silicon form channel MOSFET using self aligned process, the design of the channel length must consider the effect of lithography etching deviation set, not design for the optimal size, and the defect density of SiC - Sio2 interface led to the decrease of the channel mobility, have adverse effects on the RONSP. How to reduce the influence of lithographic sleeve deviation on channel length, optimize defect density of SiC-SiO2 interface, and improve channel mobility.